One Switch Topologies High Voltage Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Model NO.: Osg90r1K2if To262
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Plastic Sealed Transistor
• Power Level: Medium Power
• Material: Silicon
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Type: Fast EV Charging Station
• Warranty: 24 Months
• Transport Package: Carton
• Specification: 37*37*29CM
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20K/Monthly
• Package Size: 37.00cm * 37.00cm * 29.00cm
• Package Gross Weight: 2.000kg

Product Description

Product Description

General Description

OSG90R1K2xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.


Features                                                                      Applications

1. Low RDS(on) & FOM                                              Lighting
2. Extremely low switching loss                               Hard switching PWM
3. Excellent stability and uniformity                         Server power supply
4. Easy to drive                                                       Charger

Key Performance Parameters
 

1. 1. Absolute Maximum Ratings at Tj=25ºC unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	900	V
Gate source voltage	VGS	±30	V
Continuous drain current^1), TC=25 ºC	ID	5	A
Continuous drain current^1), TC=100 ºC		3.2
Pulsed drain current^2), TC=25 ºC	ID, pulse	15	A
Power dissipation3) for TO251, TO262, TC=25 ºC	PD	83	W
Power dissipation^3) for TO220F, TC=25 ºC		31
Single pulsed avalanche energy5)	EAS	211	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg,Tj	-55 to 150	ºC

 

 

1. &bsp; Thermal Characteristics

 

Parameter	Symbol	Value		Unit
		TO251/TO262	TO220F
Thermal resistance, junction-case	RθJC	1.5	4.0	ºC/W
Thermal resistance, junction-ambient4)	RθJA	62	62.5	ºC/W

1. Electrical Characteristics at Tj=25 ºC unless otherwise specified

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	900			V	VGS=0 V, ID=250 μA
		960	1070			VGS=0 V, ID=250 μA, Tj=150 ºC
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		1.0	1.2	Ω	VGS=10 V, ID=2 A
			2.88			VGS=10 V, ID=2 A, Tj=150 ºC
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=900 V, VGS=0 V

1. Dynamic Characteristics

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		874.2		pF	VGS=0 V, VDS=50 V, f=100 kHz
Output capacitance	Coss		37.5		pF
Reverse transfer capacitance	Crss		1.7		pF
Turn-on delay time	td(on)		33.23		ns	VGS=10 V, VDS=400 V, RG=33 Ω, ID=5 A
Rise time	tr		26.50		ns
Turn-off delay time	td(off)		44.00		ns
Fall time	tf		17.63		ns

 

 

1. Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		12.50		nC	ID=5 A, VDS=400 V, VGS=10 V
Gate-source charge	Qgs		3.75		nC
Gate-drain charge	Qgd		4.28		nC
Gate plateau voltage	Vplateau		5.8		V

1. Body Diode Characteristics

 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward current	IS			5	A	VGS<Vth
Pulsed source current	ISP			15
Diode forward voltage	VSD			1.3	V	IS=5 A, VGS=0 V
Reverse recovery time	trr		265.87		ns	VR=400 V, IS=5 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		2.88		μC
Peak reverse recovery current	Irrm		19.51		A

1. Note

 

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ºC.
5. VDD=100 V, RG=47 Ω, L=10 mH, starting Tj=25 ºC.

Marking Information
 

Product Name	Package	Marking
OSG65R038HZF	TO247	OSG65R038HZ

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3) ,TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2900	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	100	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
		700	770			VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on-state resistance	RDS(ON)		0.032	0.038	Ω	VGS=10 V, ID=40 A
			0.083			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9276		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		486		pF
Reverse transfer capacitance	Crss		12.8		pF
Effective output capacitance, energy related	Co(er)		278		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1477		pF
Turn-on delay time	td(on)		55.9		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		121.2		ns
Turn-off delay time	td(off)		114.2		ns
Fall time	tf		8.75		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		175.0		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		40.1		nC
Gate-drain charge	Qgd		76.1		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		180		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		15.2		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.