Excellent Conduction and Switching Loss To247-P 800W Ost75n65hsmf 30V Trident Gate Bipolar IGBT

• Application: Temperature Measurement
• Batch Number: 2010+
• Manufacturing Technology: Discrete Device
• Model NO.: OST75N65HSMF
• Material: Element Semiconductor
• Model: PC817
• Package: DIP(Dual In-line Package)
• Signal Processing: Simulation
• Type: N-Type Semiconductor
• Application1: Induction Converters
• Application2: Uninterruptible Power Supplies
• Features1: Advanced Tgbt TM Technology
• Features2: Excellent Conduction and Switching Loss
• Features3: Excellent Stability and Uniformity
• Features4: Fast and Soft Antiparallel Diode
• Brand: Orientalsemi
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
OST75N65HSMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.

Features
 Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel diode

Applications
Induction converters
Uninterruptible power supplies

Supply Chain

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