Interleaved Boost Pfc Aec-Q101 Qualified Moter Driver Osg65r099hszaf To247 Vds 650V RDS99mΩ Fast Recovery Diode Mosfet

• Certification: RoHS
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Model NO.: OSG65R099HSZAF TO247
• Applications: PC Power
• Industries: LED Lighting
• Transport Package: Air
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly
• Package Size: 30.00cm * 30.00cm * 35.00cm
• Package Gross Weight: 15.000kg

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                   

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Ultra-fast and robust body diode
• AEC-Q101 Qualified for Automotive Application

Applications

• PC power
• Telecom power
• Server power
• EV Charger
• Motor driver

Key Performance Parameters

 

Parameter	Value	Unit
VDS	650	V
ID, pulse	96	A
RDS(ON), max @ VGS=10V	99	mΩ
Qg	66.6	nC

Marking Information

 

Product Name	Package	Marking
OSG65R099HSZAF	TO247	OSG65R099HSZA

The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E.

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	32	A
Continuous drain current^1), TC=100 °C		20
Pulsed drain current^2), TC=25 °C	ID, pulse	96	A
Continuous diode forward current^1), TC=25 °C	IS	32	A
Diode pulsed current^2), TC=25 °C	IS, pulse	96	A
Power dissipation^3) ,TC=25 °C	PD	278	W
Single pulsed avalanche energy5)	EAS	648	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.45	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=1 mA
Drain-source on- state resistance	RDS(ON)		0.090	0.099	Ω	VGS=10 V, ID=16 A
			0.21			VGS=10 V, ID=16 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		7.8		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		3988		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		210		pF
Reverse transfer capacitance	Crss		7.4		pF
Effective output capacitance, energy related	Co(er)		124		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		585		pF
Turn-on delay time	td(on)		46.0		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=20 A
Rise time	tr		60.3		ns
Turn-off delay time	td(off)		93.0		ns
Fall time	tf		3.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		66.6		nC	VGS=10 V, VDS=400 V, ID=20 A
Gate-source charge	Qgs		20.6		nC
Gate-drain charge	Qgd		24.8		nC
Gate plateau voltage	Vplateau		6.7		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=32 A, VGS=0 V
Reverse recovery time	trr		151.7		ns	IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.0		μC
Peak reverse recovery current	Irrm		12.3		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.

 

 

 

1. What service do you have ?

We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support . 
 
2. May I have some samples for testing?

We offer free samples for our customers and they only need to pay the freight for samples.

3. What about the delivery ?

Usually the lead time is about 1-4  weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?

This can be discussed based on the actual order situation. 
 
5. What about the shipment terms ?

EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients  

6. Do you have any minimum order quantity requirement?

Based on the different products, for first trial order to test, we can offer the quantity based on clients request,   for repeated order, MOQ is based on the minimum packaging quantity.