EV Charging Piles 3-Phase Vienna Topology To247 Osg65r035hf High Voltage Power Mosfet

• Manufacturing Technology: Optoelectronic Semiconductor
• Material: Element Semiconductor
• Type: N-type Semiconductor
• Package: DIP(Dual In-line Package)
• Signal Processing: Analog Digital Composite and Function
• Application: Temperature Measurement
• Model NO.: OSG65R035HF
• Model: PC817
• Batch Number: 2010+
• Brand: Oriental Semi
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Transport Package: Air
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features                                                                                                   

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity

Applications

• PC power
• LED lighting
• Telecom power
• Server power
• EV Charger
• Solar/UPS
•  
• Key Performance Parameters
•  

  Parameter	Value	Unit
  VDS, min @ Tj(max)	700	V
  ID, pulse	240	A
  RDS(ON) , max @ VGS=10V	35	mΩ
  Qg	153.6	nC

  
  Marking Information
   

  Product Name	Package	Marking
  OSG65R035HTF	TO247	OSG65R035HT

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3) TC=25 °C	PD	455	W
Single pulsed avalanche energy5)	EAS	1700	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.27	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
		700				VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.8		4.0	V	VDS=VGS, ID=2 mA
Drain-source on- state resistance	RDS(ON)		0.028	0.035	Ω	VGS=10 V, ID=40 A
			0.075			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			5	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.4		Ω	ƒ= 1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		7549.2		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		447.1		pF
Reverse transfer capacitance	Crss		13.2		pF
Turn-on delay time	td(on)		52.3		ns	VGS=10 V, VDS=400 V, RG=5 Ω, ID=40 A
Rise time	tr		86.8		ns
Turn-off delay time	td(off)		165.2		ns
Fall time	tf		8.5		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		153.6		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		41.8		nC
Gate-drain charge	Qgd		50.2		nC
Gate plateau voltage	Vplateau		5.8		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		566.1		ns	VR=400V, IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		13.2		μC
Peak reverse recovery current	Irrm		45.9		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.