Aec-Q101 Qualified Driving Voltage 40V Mosfet

Product Description

Product Description

General Description

FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.


Features

• Low RDS(ON) & FOM (Figure of Merit)
• Extremely low switching loss                                                                 
• Excellent reliability and uniformity
• Fast switching and soft recovery
• AEC-Q101 Qualified for Automotive Applications

Applications

• Consumer electronic power supply
• Motor control
• Synchronous rectification
• Isolated DC/DC convertor
• Invertors

Key Performance Parameters

 

Parameter	Value	Unit
VDS	40	V
ID, pulse	600	A
RDS(ON) max @ VGS=10V	1.1	mΩ
Qg	118.4	nC

Marking Information

 

Product Name	Package	Marking
SFS04R013UGF	PDFN5 x 6	SFS04R013UG

 

BV >45V, Rdson <1.1mohm
- FOM and Rdson consistent with Infineon BSC010N04LSI

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	40	V
Gate source voltage	VGS	±20	V
Continuous drain current^1), TC=25 °C	ID	200	A
Pulsed drain current^2), TC=25 °C	ID, pulse	600	A
Continuous diode forward current^1), TC=25 °C	IS	200	A
Diode pulsed current^2), TC=25 °C	IS, Pulse	600	A
Power dissipation^3), TC=25 °C	PD	178	W
Single pulsed avalanche energy5)	EAS	144	mJ
Operation and storage temperature	Tstg,Tj	-55 to 175	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.84	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	40			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.2		2.5	V	VDS=VGS, ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.9	1.1	mΩ	VGS=10 V, ID=20 A
Drain-source on- state resistance	RDS(ON)		1.5	2.0	mΩ	VGS=6 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	uA	VDS=40 V, VGS=0 V
Gate resistance	RG		3.2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		5453		pF	VGS=0 V, VDS=25 V, ƒ=100 kHz
Output capacitance	Coss		1951		pF
Reverse transfer capacitance	Crss		113		pF
Turn-on delay time	td(on)		23.9		ns	VGS=10 V, VDS=40 V, RG=2 Ω, ID=40 A
Rise time	tr		16.9		ns
Turn-off delay time	td(off)		80.4		ns
Fall time	tf		97.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		85.6		nC	VGS=10 V VDS=40 V, ID=40 A,
Gate-source charge	Qgs		17.6		nC
Gate-drain charge	Qgd		14.5		nC
Gate plateau voltage	Vplateau		3.6		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		71.1		ns	VR=40 V, IS=40 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		50.1		nC
Peak reverse recovery current	Irrm		1.2		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.

VDD=30 V,VG=10 V, L=0.3 mH, starting Tj=25 °C.