Mode To247 Ost120n65hemf Vces-650V Maximum Junction Temperature175, IC, Pulse-480A Vce (sat) -1.6V Qg-261nc N-Channel Power IGBT

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: OST120N65HEMF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
OST120N65HEMF  uses  advanced  Oriental-Semi's  patented  Trident-Gate  Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.



Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel diode



Applications
      PV inverters
      Induction converters
      Uninterruptible power supplies



Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	480	A
VCE(sat), typ @ VGE=15V	1.6	V
Qg	261	nC

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01		±30	V
Continuous collector current1) , TC=25ºC	IC	160	A
Continuous collector current1) , TC=100ºC		120	A
Pulsed collector current2) , TC=25ºC	IC, pulse	480	A
Diode forward current1) , TC=25ºC	IF	90	A
Diode forward current1) , TC=100ºC		89	A
Diode pulsed current2) , TC=25ºC	IF, pulse	300	A
Power dissipation3) , TC=25ºC	PD	536	W
Power dissipation3) , TC=100ºC		268	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.28	°C/W
Diode thermal resistance, junction-case	RθJC	0.38	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.60	1.85	V	VGE =15 V, IC=120 A Tvj=25°C
			1.88		V	VGE =15 V, IC=120 A, Tvj  =125°C
			2.05			VGE =15 V, IC=120 A, Tvj  =175°C
Gate-emitter        threshold voltage	VGE(th)	3.5	4.5	5.5	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		2.0	2.2	V	VGE =0 V, IF =120 A Tvj  =25°C
			1.90			VGE =0 V, IF =120 A, Tvj  =125°C
			1.82			VGE =0 V, IF =120 A, Tvj  =175°C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE =650 V, VGE =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		15022		pF	VGE=0 V, VCE =25 V, ƒ=100 kHz
Output capacitance	Coes		297		pF
Reverse transfer capacitance	Cres		10		pF
Turn-on delay time	td(on)		109		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=120 A
Rise time	tr		143		ns
Turn-off delay time	td(off)		218		ns
Fall time	tf		88		ns
Turn-on energy	Eon		6.32		mJ
Turn-off energy	Eoff		2.76		mJ
Turn-on delay time	td(on)		98		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=60 A
Rise time	tr		74		ns
Turn-off delay time	td(off)		252		ns
Fall time	tf		47		ns
Turn-on energy	Eon		2.17		mJ
Turn-off energy	Eoff		0.85		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		261		nC	VGE =15 V, VCC=520 V, IC=120 A
Gate-emitter charge	Qge		110		nC
Gate-collector charge	Qgc		58		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		111		ns	VR =400 V, IF=120 A, diF/dt=500 A/μs Tvj  = 25°C
Diode reverse recovery charge	Qrr		920		nC
Diode peak reverse recovery current	Irrm		15		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.



Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST120N65HEMF	TO247	yes	yes	yes

 

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