• Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
  • Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
  • Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
  • Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
  • Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
  • Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet

Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet

Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Air Cooled Tube
Function: Switch Transistor
Working Frequency: High Frequency
Gold Member Since 2022

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Manufacturer/Factory, Trading Company

Basic Info.

Model NO.
TO252 OSG80R1K4DF
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description


General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The  GreenMOS®   Generic  series  is  optimized for extreme  switching  performance  to  minimize switching  loss .  It is tailored for high power density applications  to  meet the  highest efficiency standards .

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS

Key Performance Parameters
 
Parameter Value Unit
VDS, min @ Tj(max) 850 V
ID, pulse 12 A
RDS(ON) , max @ VGS=10V 1.4 Ω
Qg 7.5 nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 800 V
Gate-source voltage VGS ±30 V
Continuous drain current1) , TC=25 °C
ID
4
A
Continuous drain current1) , TC=100 °C 2.5
Pulsed drain current2) , TC=25 °C ID, pulse 12 A
Continuous diode forward current1) , TC=25 °C IS 4 A
Diode pulsed current2) , TC=25 °C IS, pulse 12 A
Power dissipation3) , TC=25 °C PD 37 W
Single pulsed avalanche energy5) EAS 100 mJ
MOSFET dv/dt ruggedness, VDS=0…640 V dv/dt 50 V/ns
Reverse diode dv/dt, VDS=0…640 V, ISD≤ID dv/dt 15 V/ns
Operation and storage temperature Tstg , Tj -55 to 150 °C

Ordering Information
 
Package
Type
Units/
Reel
Reels/   Inner Box Units/   Inner Box Inner Boxes/ Carton Box Units/     Carton Box
TO252-J 2500 2 5000 5 25000
TO252-P 2500 2 5000 5 25000

Product Information
 
Product Package Pb Free RoHS Halogen Free
OSG80R1K4DF TO252 yes yes yes



Supply Chain
Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet



Green Product Declaration

Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet
 
Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power MosfetTransistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet

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Gold Member Since 2022

Suppliers with verified business licenses

Manufacturer/Factory, Trading Company
Registered Capital
10000000 RMB
Plant Area
501~1000 square meters