• Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
  • Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
  • Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
  • Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
  • Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
  • Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet

Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet

Certification: RoHS, ISO
Shape: Metal Porcelain Tube
Shielding Type: Sharp Cutoff Shielding Tube
Cooling Method: Air Cooled Tube
Function: Switch Transistor
Working Frequency: High Frequency
Gold Member Since 2022

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Basic Info.

Model NO.
SFSE2S008UGF
Structure
Planar
Encapsulation Structure
Chip Transistor
Power Level
High Power
Material
Silicon
Transport Package
Carton
Specification
35x30x37cm
Trademark
Orientalsemi
Origin
China
HS Code
8541290000
Production Capacity
Over 1kk/Month

Product Description

 


General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially optimized for synchronous rectification systems with low driving voltage.



Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery


Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switching mode power supply



Key Performance Parameters
Parameter Value Unit
VDS 25 V
ID, pulse 800 A
RDS(ON), max @ VGS =10V 1 mΩ
Qg 89 nC




Absolute Maximum Ratings at Tj =25°C unless otherwise noted
Parameter Symbol Value Unit
Drain-source voltage VDS 25 V
Gate-source voltage VGS ±20 V
Continuous drain current1) , TC=25 °C ID 200 A
Pulsed drain current2) , TC=25 °C ID, pulse 800 A
Continuous diode forward current1) , TC=25 °C IS 200 A
Diode pulsed current2) , TC=25 °C IS, pulse 800 A
Power dissipation3), TC=25 °C PD 120 W
Single pulsed avalanche energy5) EAS 175 mJ
Operation and storage temperature Tstg , Tj -55 to 175 °C




Thermal Characteristics
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 1.25 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W



Electrical Characteristics at Tj =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source          breakdown voltage BVDSS 25     V VGS =0 V, ID =250 μA
Gate threshold
voltage
VGS(th) 1   2.5 V VDS =VGS , ID =250 μA
Drain-source on- state resistance RDS(ON)   0.82 1 mΩ VGS =10 V, ID=20 A
Gate-source
leakage current

IGSS
    100
nA
VGS =20 V
    - 100 VGS =-20 V
Drain-source
leakage current
IDSS     1 μA VDS =25V, VGS =0 V
Gate resistance RG   1.4   Ω ƒ=1 MHz, Open drain




Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   4860   pF
VGS =0 V,
VDS =25 V,
ƒ=100 kHz
Output capacitance Coss   1560   pF
Reverse transfer capacitance Crss   72   pF
Turn-on delay time td(on)   14   ns
VGS =10 V,
VDS =20 V,
RG=2 Ω,
ID=20 A
Rise time tr   16   ns
Turn-off delay time td(off)   46   ns
Fall time tf   22   ns



Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   89   nC
VGS =10 V,
VDS =20 V,
ID=20 A
Gate-source charge Qgs   12   nC
Gate-drain charge Qgd   23   nC
Gate plateau voltage Vplateau   2.5   V




Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=20 A,
VGS =0 V
Reverse recovery time trr   104   ns
VR=20V,
IS=20A,
di/dt=100 As
Reverse recovery charge Qrr   192   nC
Peak reverse recovery current Irrm   3.1   A




Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.




 
Supply ChainPdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet



Green Product Declaration

Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power MosfetPdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power MosfetPdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power MosfetPdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet
Pdfn5× 6 Sfse2s008ugf Vds-25 ID-800A RDS (ON) -1milliohm Qg-89nc N-Channel Power Mosfet

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