N-Channel 800W 900V Power Mosfet To252 Package Osg80r900df

• Application: Refrigerator
• Batch Number: 2010+
• Manufacturing Technology: Discrete Device
• Model NO.: OSG80R900DF To252-1
• Material: Element Semiconductor
• Model: ST
• Package: SMD
• Signal Processing: Analog Digital Composite and Function
• Type: N-Type Semiconductor
• Applications1: LED Lighting
• Applications2: EV Charger
• P/N: Osg80r900df
• Packing: To252
• Brand: Orientalsemi
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1K/Month
• Package Size: 59.00cm * 39.00cm * 16.00cm
• Package Gross Weight: 19.000kg

Product Description

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is  tailored for  high  power  density applications  to  meet the  highest  efficiency standards.

Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity

Applications
. PC power
. LED lighting
. Telecom power
.  Server power
. EV Charger
.  Solar/UPS

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	15	A
RDS(ON) , max @ VGS=10V	900	mΩ
Qg	11.7	nC

Marking Information
 

Product Name	Package	Marking
OSG80R900DF	TO252	OSG80R900D

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	5	A
Continuous drain current1) , TC=100 °C		3.2
Pulsed drain current2) , TC=25 °C	ID, pulse	15	A
Continuous diode forward current1) , TC=25 °C	IS	5	A
Diode pulsed current2) , TC=25 °C	IS, pulse	15	A
Power dissipation3) , TC=25 °C	PD	63	W
Single pulsed avalanche energy5)	EAS	160	mJ
MOSFET dv/dt ruggedness, VDS=0…640 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…640 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	2	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	800			V	VGS=0 V, ID=250 μA
		850				VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS , ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.8	0.9	Ω	VGS=10 V, ID=2.5 A
			2.1			VGS=10 V, ID=2.5 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				- 100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=800 V, VGS=0 V

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		647.4		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		36.1		pF
Reverse transfer capacitance	Crss		1.5		pF
Turn-on delay time	td(on)		31.3		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=4 A
Rise time	tr		16.4		ns
Turn-off delay time	td(off)		54.6		ns
Fall time	tf		7.0		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		11.7		nC	VGS=10 V, VDS=400 V, ID=4 A
Gate-source charge	Qgs		2.8		nC
Gate-drain charge	Qgd		4.4		nC
Gate plateau voltage	Vplateau		5.8		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=5 A, VGS=0 V
Reverse recovery time	trr		216.5		ns	VR =400 V, IS=4 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.9		μC
Peak reverse recovery current	Irrm		17.0		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.








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