To247 Ost75n65hevf Vces-650V Maximum Junction Temperature175 Pulse-300A Vce (sat) -1.45V Qg-235nc Power IGBT

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: OST75N65HEVF
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

 

General Description
OST75N65HEVF  uses   advanced   Oriental-Semi's   patented  Trident-Gate   Bipolar  Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.



Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel diode



Applications
      PV inverters
      Induction converters
      Uninterruptible power supplies



Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	300	A
VCE(sat), typ @ VGE=15V	1.45	V
Qg	235	nC

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01		±30	V
Continuous collector current1) , TC=25ºC	IC	90	A
Continuous collector current1) , TC=100ºC		75	A
Pulsed collector current2) , TC=25ºC	IC, pulse	300	A
Diode forward current1) , TC=25ºC	IF	90	A
Diode forward current1) , TC=100ºC		75	A
Diode pulsed current2) , TC=25ºC	IF, pulse	300	A
Power dissipation3) , TC=25ºC	PD	395	W
Power dissipation3) , TC=100ºC		198	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.38	°C/W
Diode thermal resistance, junction-case	RθJC	0.45	°C/W
Thermal resistance, junction-ambient	RθJA	40	°C/W

Electrical Characteristics at Tvj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.45	1.70	V	VGE =15 V, IC=75 A Tvj=25°C
			1.62		V	VGE =15 V, IC=75 A, Tvj  =125°C
			1.76			VGE =15 V, IC=75 A, Tvj  =175°C
Gate-emitter        threshold voltage	VGE(th)	3.5	4.5	5.5	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		1.15	1.35	V	VGE =0 V, IF =75 A Tvj  =25°C
			1.10			VGE =0 V, IF =75 A, Tvj  =125°C
			1.10			VGE =0 V, IF =75 A, Tvj  =175°C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE =650 V, VGE =0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		7685		pF	VGE=0 V, VCE =25 V, ƒ=100 kHz
Output capacitance	Coes		1590		pF
Reverse transfer capacitance	Cres		61		pF
Turn-on delay time	td(on)		80		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=75 A
Rise time	tr		88		ns
Turn-off delay time	td(off)		189		ns
Fall time	tf		48		ns
Turn-on energy	Eon		9.56		mJ
Turn-off energy	Eoff		1.21		mJ
Turn-on delay time	td(on)		72		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=30 A
Rise time	tr		43		ns
Turn-off delay time	td(off)		216		ns
Fall time	tf		10		ns
Turn-on energy	Eon		3.85		mJ
Turn-off energy	Eoff		0.34		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		235		nC	VGE =15 V, VCC=520 V, IC=75 A
Gate-emitter charge	Qge		66		nC
Gate-collector charge	Qgc		78		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		260		ns	VR =400 V, IF=75 A, diF/dt=500 A/μs Tvj  = 25°C
Diode reverse recovery charge	Qrr		13		μC
Diode peak reverse recovery current	Irrm		90		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.



 

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