PC Powe To247 Osg65r035hf Vds-650V Power Mosfet

• Certification: RoHS, ISO
• Trademark: Orientalsemi
• Model NO.: TO247 OSG65R035HF
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
 

Features

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity

 

Applications

• PC power
• LED lighting
• Telecom power
• Server power
• EV Charger
• Solar/UPS

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	240	A
RDS(ON) , max @ VGS=10V	37	mΩ
Qg	173	nC

 

Product Name	Package	Marking
OSG65R035HF	TO247	OSG65R035H

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1), TC=25 °C	ID	80	A
Continuous drain current1), TC=100 °C		50
Pulsed drain current2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current1), TC=25 °C	IS	80	A
Diode pulsed current2), TC=25 °C	IS, pulse	240	A
Power dissipation3) , TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2900	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=250 μA
		700	750			VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS=VGS, ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.031	0.035	Ω	VGS=10 V, ID=40 A
			0.074			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			1	μA	VDS=650 V, VGS=0 V

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		7816		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		537		pF
Reverse transfer capacitance	Crss		7.7		pF
Turn-on delay time	td(on)		48.1		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		88.6		ns
Turn-off delay time	td(off)		124.6		ns
Fall time	tf		9.8		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		173		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		32.5		nC
Gate-drain charge	Qgd		70.7		nC
Gate plateau voltage	Vplateau		5.8		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		435.2		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		9.0		μC
Peak reverse recovery current	Irrm		38.4		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.

 

Ordering Information

 

Package Type	Units/ Tube	Tubes/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO247-C	30	11	330	6	1980

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG65R035HF	TO247	yes	yes	yes

Supply Chain

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