Basic Info.
Model NO.
OST40N120HMF TO-247N
Shielding Type
Sharp Cutoff Shielding Tube
Cooling Method
Air Cooled Tube
Function
Microwave Transistor
Working Frequency
High Frequency
Encapsulation Structure
Chip Transistor
Specification
35.3x30x37.5/60x23x13
Product Description
General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features- Advanced TGBTTM technology
- Excellent conduction and switching loss
- Excellent stability and uniformity
- Fast and soft antiparallel diode
Applications- Induction converters
- Uninterruptible power supplies
Key Performance Parameters Parameter | Value | Unit |
VCES, min @ 25°C | 1200 | V |
Maximum junction temperature | 175 | °C |
IC, pulse | 160 | A |
VCE(sat), typ @ VGE=15V | 1.45 | V |
Qg | 214 | nC |
Marking Information Product Name | Package | Marking |
OST40N120HMF | TO247 | OST40N120HM |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted Parameter | Symbol | Value | Unit |
Collector emitter voltage | VCES | 1200 | V |
Gate emitter voltage | VGES | ±20 | V |
Transient gate emitter voltage, TP≤0.5µs, D<0.001 | ±25 | V |
Continuous collector current1), TC=25ºC | IC | 56 | A |
Continuous collector current1), TC=100ºC | 40 | A |
Pulsed collector current2), TC=25ºC | IC, pulse | 160 | A |
Diode forward current1), TC=25ºC | IF | 56 | A |
Diode forward current1), TC=100ºC | 40 | A |
Diode pulsed current2), TC=25ºC | IF, pulse | 160 | A |
Power dissipation3), TC=25ºC | PD | 357 | W |
Power dissipation3), TC=100ºC | 179 | W |
Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
Short circuit withstand time VGE=15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj=150 °C | tSC | 10 | μs |
Thermal CharacteristicsParameter | Symbol | Value | Unit |
IGBT thermal resistance, junction-case | RθJC | 0.42 | °C/W |
Diode thermal resistance, junction-case | RθJC | 0.75 | °C/W |
Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj=25°C unless otherwise specifiedParameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Collector-emitter breakdown voltage | V(BR)CES | 1200 | | | V | VGE=0 V, IC=0.5 mA |
Collector-emitter saturation voltage |
VCE(sat) | | 1.45 | 1.8 | V | VGE=15 V, IC=40 A Tvj=25°C |
| 1.65 | | V | VGE=15 V, IC=40 A, Tvj =125°C |
| 1.8 | | | VGE=15 V, IC=40 A, Tvj =175°C |
Gate-emitter threshold voltage | VGE(th) | 4.8 | 5.8 | 6.8 | V | VCE=VGE, ID=0.5 mA |
Diode forward voltage |
VF | | 1.9 | 2.1 | V | VGE=0 V, IF=40 A Tvj =25°C |
| 1.6 | | | VGE=0 V, IF=40 A, Tvj =125°C |
| 1.5 | | | VGE=0 V, IF=40 A, Tvj =175°C |
Gate-emitter leakage current | IGES | | | 100 | nA | VCE=0 V, VGE=20 V |
Zero gate voltage collector current | ICES | | | 10 | μA | VCE=1200V, VGE=0 V |
Dynamic Characteristics Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Input capacitance | Cies | | 11270 | | pF | VGE=0 V, VCE=25 V, ƒ=100 kHz |
Output capacitance | Coes | | 242 | | pF |
Reverse transfer capacitance | Cres | | 10 | | pF |
Turn-on delay time | td(on) | | 120 | | ns |
VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A |
Rise time | tr | | 88 | | ns |
Turn-off delay time | td(off) | | 246 | | ns |
Fall time | tf | | 160 | | ns |
Turn-on energy | Eon | | 3.14 | | mJ |
Turn-off energy | Eoff | | 1.02 | | mJ |
Turn-on delay time | td(on) | | 112 | | ns |
VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A |
Rise time | tr | | 51 | | ns |
Turn-off delay time | td(off) | | 284 | | ns |
Fall time | tf | | 148 | | ns |
Turn-on energy | Eon | | 1.32 | | mJ |
Turn-off energy | Eoff | | 0.53 | | mJ |
Gate Charge Characteristics Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | | 214 | | nC | VGE=15 V, VCC=960 V, IC=40 A |
Gate-emitter charge | Qge | | 103 | | nC |
Gate-collector charge | Qgc | | 40 | | nC |
Body Diode Characteristics Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Diode reverse recovery time | trr | | 293 | | ns | VR=600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C |
Diode reverse recovery charge | Qrr | | 2.7 | | μC |
Diode peak reverse recovery current | Irrm | | 25 | | A |
Note- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
Version 1: TO247-P package outline dimension
Ordering Information Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information Product | Package | Pb Free | RoHS | Halogen Free |
OST40N120HMF | TO247 | yes | yes | yes |
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Supply Chain
Green Product Declaration
Address:
South Building 3-503, No.396, Xinfu Rd, Minhang District, Shanghai, China
Business Type:
Manufacturer/Factory, Trading Company
Business Range:
Auto, Motorcycle Parts & Accessories, Consumer Electronics, Industrial Equipment & Components, Lights & Lighting
Management System Certification:
ISO 9001, ISO 14001
Company Introduction:
Founded in 2009, Winture has been deeply engaged in the Mosfet transistor and industrial Connectors for 15 years and has been a close partner and high-qualified supplier of the worldwide top 500 and emerging Chinese manufacturers. About Oriental Semiconductor, it is a tens of billions of chip listed companies and manufacturers in China, with a strong R & D team and design capabilities, is developing rapidly. Currently, Winture is the only overseas trading company for Oriental Semiconductor′s North American market and the Asia-Pacific region. Winture focus on developing the market of high-voltage super junction MOSFET, medium and low-voltage shielded gate MOSFET, super silicon MOSFET and Tri gate IGBT. Winture has the excellent and sufficient market research in high-performance power device as well as the design ability. And always focused on the industrial and automotive applications represented by new energy vehicle DC charging piles, on board chargers, 5G base station power supply and communication power supply, photovoltaic inverter and energy storage, data center server power supply and industrial lighting power supply. Winture has a long term strategic cooperation with relevant leading manufacturers.
With deep technical accumulation in the field of devices as a core semiconductor technology, focusing on semiconductor device technology innovation, has a number of core patents for semiconductor devices. In the second half of 2013, the technical paper of Oriental Semiconductor Semiconductor′s original semi-floating gate device was published in the American journal Science, marking a major breakthrough for domestic scientists in the direction of semiconductor core technology, and the news broadcast, People′s Daily and other media have made headline key reports, which has attracted great attention from the industry at home and abroad. In 2016, the core chip for DC high-power charging pile for new energy vehicles independently developed by Oriental Semiconductor was successfully mass-produced, breaking the monopoly of foreign manufacturers. At present, Oriental Semiconductor has become a leader in the field of high-performance power semiconductors in China, and has taken a solid step in replacing imported semiconductor products in the field of new energy, and its products have entered a number of international first-line customers and have been well received by customers. So far, in EV charging field, 80% manufacture choose us. In terms of chips for photovoltaic inverters, Oriental Semiconductor chips have been steadily supplied for some very famous USA manufacturers. Advanced patented Trident-Gate Bipolar Transistor (TGBT™ ) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for MID to high range switching frequency converters.
Winture aim: To reduce the production cost with stable and cost-effective products
More environmentally friendly and less noise
Excellent stability and uniformity
Extremely low switching loss
Low RDS(ON) & FOM
Fast and soft antiparallel diode