High Speed Switch Pdfn5*6 Sfg15r25GF Vds-150V ID-180A RDS (ON) -25milliohm Qg-42.8nc Power Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: PDFN5*6 SFG15R25GF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Fast switching and soft recovery


Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switched mode power supply


Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	150	V
ID, pulse	180	A
RDS(ON), max @ VGS =10V	25	mΩ
Qg	42.8	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	150	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	60	A
Pulsed drain current2) , TC=25 °C	ID, pulse	180	A
Continuous diode forward current1) , TC=25 °C	IS	60	A
Diode pulsed current2) , TC=25 °C	IS, pulse	180	A
Power dissipation3) , TC=25 °C	PD	100	W
Single pulsed avalanche energy5)	EAS	2.4	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	150			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	1.5		2.5	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		20	25	mΩ	VGS =10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		25	30	mΩ	VGS =4.5 V, ID=20 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =150 V, VGS =0 V
Gate resistance	RG		4		Ω	ƒ=1 MHz, Open drain

 

Ordering Information

Package Type	Units/ Reel	Reels /   Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
PDFN5*6-C	5000	2	10000	5	50000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFG15R25GF	PDFN5*6	yes	yes	yes

 

Supply Chain

Green Product Declaration