To220f Osg55r160fzf Vds-600V ID-69A RDS (ON) -160milliohm Qg-23.3nc Server Power Motor Driver Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: High Back Pressure Transistor, Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO220F OSG55R160FZF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Ultra-fast and robust body diode

Applications
      PC power
      Telecom power
      Server power
      EV Charger
      Motor driver

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	600	V
ID, pulse	69	A
RDS(ON), max @ VGS =10V	160	mΩ
Qg	21.3	nC

 

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	550	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	23	A
Continuous drain current1) , TC=100 °C		14.5
Pulsed drain current2) , TC=25 °C	ID, pulse	69	A
Continuous diode forward current1) , TC=25 °C	IS	23	A
Diode pulsed current2) , TC=25 °C	IS, pulse	69	A
Power dissipation3) , TC=25 °C	PD	34	W
Single pulsed avalanche energy5)	EAS	250	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	3.7	°C/W
Thermal resistance, junction-ambient4)	RθJA	62.5	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	550			V	VGS =0 V, ID =250 uA
		600	675			VGS =0 V, ID =250 uA, Tj =150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS =VGS , ID =250 uA,
Drain-source on- state resistance	RDS(ON)		0.12	0.16	Ω	VGS =10 V, ID=11.5 A
			0.29			VGS =10 V, ID=11.5 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =550 V, VGS =0 V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=10 mH, starting Tj =25 °C.








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