Fast Recovery Diode Frd Osg65r038hzf To247 High Voltage Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Model NO.: OSG65R038HZF TO247
• Cooling Method: Air Cooled Tube
• Function: Microwave Transistor, Switch Transistor
• Working Frequency: High Frequency
• Structure: Planar
• Encapsulation Structure: Plastic Sealed Transistor
• Power Level: Medium Power
• Material: Silicon
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications: PC Power
• Industries: LED Lighting
• Type: Fast EV Charging Station
• Warranty: 24 Months
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly

Product Description

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features

• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• Ultra-fast and robust body diode

Applications

• PC power
• Telecom power
• Server power
• EV Charger
• Motor driver

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current^1), TC=25 °C	ID	80	A
Continuous drain current^1), TC=100 °C		50
Pulsed drain current^2), TC=25 °C	ID, pulse	240	A
Continuous diode forward current^1), TC=25 °C	IS	80	A
Diode pulsed current^2), TC=25 °C	IS, pulse	240	A
Power dissipation^3) ,TC=25 °C	PD	500	W
Single pulsed avalanche energy5)	EAS	2900	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	100	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	50	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.25	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	650			V	VGS=0 V, ID=2 mA
		700	770			VGS=0 V, ID=2 mA, Tj=150 °C
Gate threshold voltage	VGS(th)	3.0		4.5	V	VDS=VGS, ID=2 mA
Drain-source on-state resistance	RDS(ON)		0.032	0.038	Ω	VGS=10 V, ID=40 A
			0.083			VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				-100		VGS=-30 V
Drain-source leakage current	IDSS			10	μA	VDS=650 V, VGS=0 V
Gate resistance	RG		2.1		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		9276		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		486		pF
Reverse transfer capacitance	Crss		12.8		pF
Effective output capacitance, energy related	Co(er)		278		pF	VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related	Co(tr)		1477		pF
Turn-on delay time	td(on)		55.9		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time	tr		121.2		ns
Turn-off delay time	td(off)		114.2		ns
Fall time	tf		8.75		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		175.0		nC	VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge	Qgs		40.1		nC
Gate-drain charge	Qgd		76.1		nC
Gate plateau voltage	Vplateau		6.4		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=80 A, VGS=0 V
Reverse recovery time	trr		180		ns	IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		1.5		uC
Peak reverse recovery current	Irrm		15.2		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=300 V, VGS=10 V, L=40 mH, starting Tj=25 °C.