Aec-Q101 Qualified Automotive Applications Mosfet

• Application: Lorry, Truck, Car, Mini Car, Microbus
• Certification: ISO, RoHS
• Power Supply: Battery
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: SFS04R038GF PDFN5x6
• Type: Car Electric Heating Cup
• Description: Extremely Low Switching Loss
• Characteristics: Excellent Stability and Uniformity
• Applications1: Pd Charger
• Applications2: Motor Driver
• Applications3: Switching Voltage Regulator
• Applications4: DC-DC Convertor
• Applications5: Switching Mode Power Supply
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemiconductor
• Origin: China
• HS Code: 854129000
• Production Capacity: 20kkkk/Monthly
• Package Size: 59.00cm * 39.00cm * 16.00cm
• Package Gross Weight: 19.000kg

Product Description

 

Product Description

General Description

FSMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage.

Features

• Low RDS(ON) & FOM
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery
• AEC-Q101 Qualified for Automotive Applications

Applications

• PD charger
• Motor driver
• Switching voltage regulator
• DC-DC convertor
• Switching mode power supply

Key Performance Parameters

 

Parameter	Value	Unit
VDS	40	V
ID, pulse	255	A
RDS(ON), max @ VGS=10V	3.8	mΩ
Qg	36.6	nC

Marking Information

 

Product Name	Package	Marking
SFS04R038GF	PDFN5 x6	SFS04R038G

 

 

Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	40	V
Gate-source voltage	VGS	±20	V
Continuous drain current^1), TC=25 °C	ID	85	A
Pulsed drain current^2), TC=25 °C	ID, pulse	255	A
Continuous diode forward current^1), TC=25 °C	IS	85	A
Diode pulsed current^2), TC=25 °C	IS, pulse	255	A
Power dissipation^3), TC=25 °C	PD	78	W
Single pulsed avalanche energy5)	EAS	43	mJ
Operation and storage temperature	Tstg, Tj	-55 to 175	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.92	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	40			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.5		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		3.5	3.8	mΩ	VGS=10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		5.4	7.0	mΩ	VGS=4.5 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=40 V, VGS=0 V
Gate resistance	RG		4		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		2378		pF	VGS=0 V, VDS=25 V, ƒ=100 kHz
Output capacitance	Coss		798		pF
Reverse transfer capacitance	Crss		64		pF
Turn-on delay time	td(on)		23		ns	VGS=10 V, VDS=20 V, RG=2 Ω, ID=20 A
Rise time	tr		6.4		ns
Turn-off delay time	td(off)		51.2		ns
Fall time	tf		9.6		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		36.6		nC	VGS=10 V, VDS=20 V, ID=20 A
Gate-source charge	Qgs		7.6		nC
Gate-drain charge	Qgd		5.7		nC
Gate plateau voltage	Vplateau		3.3		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		51.2		ns	VR=20 V, IS=20 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		31.8		nC
Peak reverse recovery current	Irrm		1.2		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5. VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.