Solar/UPS High Voltage Single N-Channel Power Mosfet

• Application: Solar Cell
• Batch Number: 2024+
• Manufacturing Technology: Integrated Circuits Device
• Model NO.: OSG80R300JF
• Material: Compound Semiconductor
• Model: Osg80r300jf
• Package: QFP/PFP
• Signal Processing: Analog Digital Composite and Function
• Type: N-Type Semiconductor
• Application1: EV Charger
• Application2: LED Lighting
• Application3: Telecom Power
• Application4: Solar/UPS
• Application5: Sever Power
• Application6: PC Power
• Brand: Orientalsemi
• Transport Package: Air
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 59.00cm * 3.00cm * 15.00cm
• Package Gross Weight: 18.000kg

Product Description

Product Description

General Description
The  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The  Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      LED lighting
     Telecom Power
      Solar/UPS
      Sever power
      PC power
      EV Charger
 

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	45	A
RDS(ON) , max @ VGS=10V	300	mΩ
Qg	23.3	nC

Marking Information
 

Product Name	Package	Marking
OSG80R300JF	PDFN 8×8	OSG80R300J

Package & Pin Information

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	15	A
Continuous drain current1) , TC=100 °C		9.5
Pulsed drain current2) , TC=25 °C	ID, pulse	45	A
Continuous diode forward current1) , TC=25 °C	IS	15	A
Diode pulsed current2) , TC=25 °C	IS, pulse	45	A
Power dissipation3) , TC=25 °C	PD	151	W
Single pulsed avalanche energy5)	EAS	360	mJ
MOSFET dv/dt ruggedness, VDS=0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.83	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	800			V	VGS=0 V, ID=250 μA
		850				VGS=0 V, ID=250 μA, Tj=150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS=VGS , ID=250 μA
Drain-source on- state resistance	RDS(ON)		0.24	0.3	Ω	VGS=10 V, ID=7.5 A
			0.64			VGS=10 V, ID=7.5 A, Tj=150 °C
Gate-source leakage current	IGSS			100	nA	VGS=30 V
				- 100		VGS=-30 V
Drain-source leakage current	IDSS			5	μA	VDS=800 V, VGS=0 V
Gate resistance	RG		18.2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1552		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		80.1		pF
Reverse transfer capacitance	Crss		2.1		pF
Turn-on delay time	td(on)		33.6		ns	VGS=10 V, VDS=400 V, RG=2 Ω, ID=7.5 A
Rise time	tr		20.3		ns
Turn-off delay time	td(off)		57.9		ns
Fall time	tf		4.5		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		22.7		nC	VGS=10 V, VDS=400 V, ID=7.5 A
Gate-source charge	Qgs		8.6		nC
Gate-drain charge	Qgd		2.3		nC
Gate plateau voltage	Vplateau		5.5		V

Body Diode Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=15 A, VGS=0 V
Reverse recovery time	trr		313.7		ns	VR =400 V, IS=7.5 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		4.2		μC
Peak reverse recovery current	Irrm		25.2		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature. 2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °

Supply Chain

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