DC-DC Convertor Pdfn5*6 Sfg10r08GF Vds-100V ID-300A RDS (ON) -7milliohm Qg-60.7nc Switched N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: PDFN5*6 SFG10R08GF
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month
• Package Size: 35.00cm * 30.00cm * 37.00cm
• Package Gross Weight: 15.000kg

Product Description

General Description

SFGMOS^® MOSFET is based on Oriental Semiconductor's unique device design to achieve low R_DS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low V_th series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features

• Low R_DS(ON) & FOM
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery

 

Applications

• PD charger
• Motor driver
• Switching voltage regulator
• DC-DC convertor
• Switched mode power supply

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	100	V
ID, pulse	300	A
RDS(ON) max @ VGS=10V	7	mΩ
Qg	60.7	nC

Marking Information

 

Product Name	Package	Marking
SFG10R08GF	PDFN5*6	SFG10R08G

 

Absolute Maximum Ratings at T_j=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	100	V
Gate source voltage	VGS	±20	V
Continuous drain current^1), TC=25 °C	ID	100	A
Pulsed drain current^2), TC=25 °C	ID, pulse	300	A
Continuous diode forward current^1), TC=25 °C	IS	100	A
Diode pulsed current^2), TC=25 °C	IS, Pulse	300	A
Power dissipation^3), TC=25 °C	PD	148	W
Single pulsed avalanche energy^5)	EAS	130	mJ
Operation and storage temperature	Tstg,Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.84	°C/W
Thermal resistance, junction-ambient^4)	RθJA	62	°C/W

Electrical Characteristics at T_j=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	100			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.0		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		5.8	7.0	mΩ	VGS=10 V, ID=12 A
Drain-source on-state resistance	RDS(ON)		8.5	10.0	mΩ	VGS=4.5 V, ID=9 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=100 V, VGS=0 V

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		3530		pF	VGS=0 V, VDS=50 V, ƒ=1 MHz
Output capacitance	Coss		560		pF
Reverse transfer capacitance	Crss		9.0		pF
Turn-on delay time	td(on)		22.5		ns	VGS=10 V, VDS=50 V, RG=2 Ω, ID=10 A
Rise time	tr		8.6		ns
Turn-off delay time	td(off)		66.6		ns
Fall time	tf		42.1		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		60.7		nC	VGS=10 V, VDS=50 V, ID=10 A
Gate-source charge	Qgs		7.2		nC
Gate-drain charge	Qgd		14.6		nC
Gate plateau voltage	Vplateau		2.9		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=30 A, VGS=0 V
Reverse recovery time	trr		67		ns	VR=50 V, IS=10 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		160		nC
Peak reverse recovery current	Irrm		3.9		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of R_θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T_a=25 °C.
5. V_DD=50 V,V_GS=10 V, L=0.3 mH, starting T_j=25 °C.

 

Ordering Information

 

Package Type	Units/ Reel	Reels / Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
PDFN5*6-C	5000	2	10000	5	50000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
SFG10R08GF	PDFN5*6	yes	yes	yes

 

Supply Chain

Green Product Declaration

 

1. What service do you have ?

We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support . 
 
2. May I have some samples for testing?

We offer free samples for our customers and they only need to pay the freight for samples.

3. What about the delivery ?

Usually the lead time is about 1-4  weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?

This can be discussed based on the actual order situation. 
 
5. What about the shipment terms ?

EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients  

6. Do you have any minimum order quantity requirement?

Based on the different products, for first trial order to test, we can offer the quantity based on clients request,   for repeated order, MOQ is based on the minimum packaging quantity.