N-Channel Power Mosfet Pdfn8*8 Osg65r125jf Vds-700V ID-75A RDS (ON) -125milliohm Qg-41.9nc for Telecom Power Solar/UPS

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: PDFN8*8 OSG65R125JF
• Structure: Diffusion
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is tailored for  high  power density applications to  meet the  highest  efficiency standards.


Features
      Low RDS(on) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	700	V
ID, pulse	75	A
RDS(ON), max @ VGS =10V	125	mΩ
Qg	41.9	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	650	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	25	A
Continuous drain current1) , TC=100 °C		16
Pulsed drain current2) , TC=25 °C	ID, pulse	75	A
Continuous diode forward current1) , TC=25 °C	IS	25	A
Diode pulsed current2) , TC=25 °C	IS, pulse	75	A
Power dissipation3) , TC=25 °C	PD	219	W
Single pulsed avalanche energy5)	EAS	730	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.57	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	650			V	VGS =0 V, ID =1 mA
		700	740			VGS =0 V, ID =1 mA, Tj =150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS =VGS , ID =1 mA
Drain-source on- state resistance	RDS(ON)		0.115	0.125	Ω	VGS =10 V, ID=12.5 A
			0.278			VGS =10 V, ID=12.5 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			1	μA	VDS =650 V, VGS =0 V

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=80 mH, starting Tj =25 °C.

Ordering Information

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
PDFN 8×8-L	2500	2	5000	5	25000
PDFN 8×8-S	3000	1	3000	10	30000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG65R125JF	PDFN 8×8	yes	yes	yes

Supply Chain

Green Product Declaration