Pdf5X6 Sfs06r045ugf Vds-60 ID-240A RDS (ON) -4.5milliohm Qg-33nc Switching Voltage Regulator N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: GT
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: SFS06R045UGF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth  series is specially optimized for synchronous rectification systems with low driving voltage.



Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery



Applications
      PD charger
      Motor driver
      Switching voltage regulator
      DC-DC convertor
      Switching mode power supply



Key Performance Parameters

Parameter	Value	Unit
VDS	60	V
ID, pulse	240	A
RDS(ON), max @ VGS =10V	4.5	mΩ
Qg	33	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	60	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	60	A
Pulsed drain current2) , TC=25 °C	ID, pulse	240	A
Continuous diode forward current1) , TC=25 °C	IS	60	A
Diode pulsed current2) , TC=25 °C	IS, pulse	240	A
Power dissipation3), TC=25 °C	PD	37	W
Single pulsed avalanche energy5)	EAS	9.6	mJ
Operation and storage temperature	Tstg , Tj	-55 to 175	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	4.05	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	60			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	1		2.5	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		3	4.5	mΩ	VGS =10 V, ID=30 A
Drain-source on-state resistance	RDS(ON)		4.5	6.5	mΩ	VGS =4.5 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =60 V, VGS =0 V
Gate resistance	RG		3.1		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		1970		pF	VGS =0 V, VDS =25 V, ƒ=100 kHz
Output capacitance	Coss		882		pF
Reverse transfer capacitance	Crss		62		pF
Turn-on delay time	td(on)		9		ns	VGS =10 V, VDS =30 V, RG=2 Ω, ID=30 A
Rise time	tr		13		ns
Turn-off delay time	td(off)		31		ns
Fall time	tf		7.7		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		33		nC	VGS =10 V, VDS =30 V, ID=30 A
Gate-source charge	Qgs		5		nC
Gate-drain charge	Qgd		7		nC
Gate plateau voltage	Vplateau		2.8		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS =0 V
Reverse recovery time	trr		45		ns	VR=30 V, IS=30 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		54		nC
Peak reverse recovery current	Irrm		2.3		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in2  FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.





 

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