To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

• Certification: RoHS, ISO
• Shape: Subminiature
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO247 OST30N65HMF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
OST30N65HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology  to   provide   extremely   low  VCE(sat), low   gate   charge,   and   excellent   switching performance. This device is suitable for mid to high range switching frequency converters.


Features
      Advanced TGBTTM technology
      Excellent conduction and switching loss
      Excellent stability and uniformity
      Fast and soft antiparallel diode



Applications
      PV inverters
      Induction converters
      Uninterruptible power supplies



Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	120	A
VCE(sat), typ @ VGE=15V	1.5	V
Qg	56	nC

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01		±30	V
Continuous collector current1) , TC=25ºC	IC	42	A
Continuous collector current1) , TC=100ºC		30	A
Pulsed collector current2) , TC=25ºC	IC, pulse	120	A
Diode forward current1) , TC=25ºC	IF	42	A
Diode forward current1) , TC=100ºC		30	A
Diode pulsed current2) , TC=25ºC	IF, pulse	120	A
Power dissipation3) , TC=25ºC	PD	250	W
Power dissipation3) , TC=100ºC		125	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S	SC	5	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.8	°C/W
Diode thermal resistance, junction-case	RθJC	1.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	40	°C/W

Electrical Characteristics at Tvj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter    breakdown voltage	V(BR)CES	650			V	VGE =0 V, IC =0.5 mA
Collector-emitter  saturation voltage	VCE(sat)		1.5	1.63	V	VGE =15 V, IC=30 A Tvj=25°C
			1.7		V	VGE =15 V, IC=30 A, Tvj  =125°C
			1.8			VGE =15 V, IC=30 A, Tvj  =175°C
Gate-emitter        threshold voltage	VGE(th)	4	5	6	V	VCE =VGE , ID =0.5 mA
Diode forward voltage	VF		1.75	2.05	V	VGE =0 V, IF =30 A Tvj  =25°C
			1.64			VGE =0 V, IF =30 A, Tvj  =125°C
			1.57			VGE =0 V, IF =30 A, Tvj  =175°C
Gate-emitter leakage current	IGES			100	nA	VCE =0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE =650 V, VGE =0 V

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		56		nC	VGE =15 V, VCC=520 V, IC=30 A
Gate-emitter charge	Qge		27		nC
Gate-collector charge	Qgc		7		nC

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.




Ordering Information
 

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO247-J	30	20	600	4	2400

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OST30N65HMF	TO247	yes	yes	yes

 

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