To220 Sfs280n10PF Vds-100 ID-800A RDS (ON) -2.1milliohm Qg-245nc Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: SFS280N10PF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x 30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
FSMOS®   MOSFET  is  based on Oriental Semiconductor's  unique device design to achieve  low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in motor control systems with driving voltage of more than 10V .
 

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent reliability and uniformity
      Fast switching and soft recovery




Applications
      Switching mode power supply
      Motor driver
      Battery protection
      DC-DC convertor
      Inverters
      UPS



Key Performance Parameters

Parameter	Value	Unit
VDS	100	V
ID, pulse	800	A
RDS(ON), max @ VGS =10V	2.1	mΩ
Qg	245	nC
PD	450	W

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	100	V
Gate-source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	340	A
Pulsed drain current2) , TC=25 °C	ID, pulse	800	A
Continuous diode forward current1) , TC=25 °C	IS	340	A
Diode pulsed current2) , TC=25 °C	IS, pulse	800	A
Power dissipation3) , TC=25 °C	PD	450	W
Single pulsed avalanche energy5)	EAS	540	mJ
Operation and storage temperature	Tstg, Tj	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.27	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	100			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		1.8	2.1	mΩ	VGS =10 V, ID=50 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =100 V, VGS =0 V
Gate resistance	RG		1.2		Ω	ƒ=1 MHz, Open drain

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		18000		pF	VGS =0 V, VDS =25 V, ƒ=100 kHz
Output capacitance	Coss		4570		pF
Reverse transfer capacitance	Crss		510		pF
Turn-on delay time	td(on)		40		ns	VGS =10 V, VDS =50 V, RG=2 Ω, ID=25 A
Rise time	tr		34		ns
Turn-off delay time	td(off)		97		ns
Fall time	tf		34		ns

Gate Charge Characteristics\

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		245		nC	VGS =10 V, VDS =50 V, ID=25 A
Gate-source charge	Qgs		74		nC
Gate-drain charge	Qgd		54		nC
Gate plateau voltage	Vplateau		4.5		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=30 A, VGS =0 V
Reverse recovery time	trr		1 10		ns	VR=50 V, IS=25 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		289		nC
Peak reverse recovery current	Irrm		4.3		A

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.




 

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