To220 Osg95r1K2PF Vds-1000V ID-15A RDS (ON) -1.2ohm N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: ST
• Shielding Type: Remote Cut-Off Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO220 OSG95R1K2PF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x30x37cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
The GreenMOS®  high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge.  It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The  GreenMOS®   Generic  series  is  optimized  for  extreme  switching  performance  to  minimize switching  loss.  It  is tailored for  high  power density applications  to  meet the  highest  efficiency standards.
Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity

Applications
      PC power
      LED lighting
      Telecom power
      Server power
      EV Charger
      Solar/UPS

Key Performance Parameters
 

Parameter	Value	Unit
VDS, min @ Tj(max)	1000	V
ID, pulse	15	A
RDS(ON) , max @ VGS =10V	1.2	Ω
Qg	14.9	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted
 

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	950	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	5	A
Continuous drain current1) , TC=100 °C		3.2
Pulsed drain current2) , TC=25 °C	ID, pulse	15	A
Continuous diode forward current1) , TC=25 °C	IS	5	A
Diode pulsed current2) , TC=25 °C	IS, pulse	15	A
Power dissipation3) , TC=25 °C	PD	83	W
Single pulsed avalanche energy5)	EAS	160	mJ
MOSFET dv/dt ruggedness, VDS =0…480 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS =0…480 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	950			V	VGS =0 V, ID =250 μA
		1000				VGS =0 V, ID =250 μA, Tj =150 °C
Gate threshold voltage	VGS(th)	2.9		3.9	V	VDS =VGS , ID =250 μA
Drain-source on- state resistance	RDS(ON)		0.92	1.2	Ω	VGS =10 V, ID=2 A
			2.82			VGS =10 V, ID=2 A, Tj =150 °C
Gate-source leakage current	IGSS			100	nA	VGS =30 V
				- 100		VGS =-30 V
Drain-source leakage current	IDSS			10	μA	VDS =950 V, VGS =0 V
Gate resistance	RG		29.5		Ω	f=1 MHz, Open drain

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA  is measured with the device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=100 V, VGS =10 V, L=79.9 mH, starting Tj =25 °C.


Ordering Information
 

Package Type	Units/ Tube	Tubes/  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO220-P	50	20	1000	6	6000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
OSG95R1K2PF	TO220	yes	yes	yes

Supply Chain

Green Product Declaration