Transistor Enhancement To220 Sfg110n12PF Vds-120V ID-330A RDS (ON) -6.5milliohm Qg-68.9nc for Battery Protection Solar Inverter N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO220 SFG110N12PF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35cm x 37cm x 30cm
• Trademark: Orientalsemi
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description
SFGMOS®  MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) ,  low gate charge, fast switching and excellent avalanche  characteristics. The  high Vth series is specially optimized for high systems with gate driving voltage greater than 10V.

Features
      Low RDS(ON) & FOM
      Extremely low switching loss
      Excellent stability and uniformity
      Fast switching and soft recovery

Applications
      Switched mode power supply
      Motor driver
      Battery protection
      DC-DC convertor
      Solar inverter
      UPS and energy inverter

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	120	V
ID, pulse	330	A
RDS(ON), max @ VGS =10V	6.5	mΩ
Qg	68.9	nC

Absolute Maximum Ratings at Tj =25°C unless otherwise noted

 

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	120	V
Gate source voltage	VGS	±20	V
Continuous drain current1) , TC=25 °C	ID	110	A
Pulsed drain current2) , TC=25 °C	ID, pulse	330	A
Continuous diode forward current1) , TC=25 °C	IS	110	A
Diode pulsed current2) , TC=25 °C	IS, pulse	330	A
Power dissipation3) , TC=25 °C	PD	192	W
Single pulsed avalanche energy5)	EAS	400	mJ
Operation and storage temperature	Tstg ,Tj	-55 to 150	°C

Thermal Characteristics
 

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	0.65	°C/W
Thermal resistance, junction-ambient4)	RθJA	62	°C/W

Electrical Characteristics at Tj =25°C unless otherwise specified
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source          breakdown voltage	BVDSS	120			V	VGS =0 V, ID =250 μA
Gate threshold voltage	VGS(th)	2.0		4.0	V	VDS =VGS , ID =250 μA
Drain-source on-state resistance	RDS(ON)		5.0	6.5	mΩ	VGS =10 V, ID=30 A
Gate-source leakage current	IGSS			100	nA	VGS =20 V
				- 100		VGS =-20 V
Drain-source leakage current	IDSS			1	μA	VDS =120 V, VGS =0 V

Dynamic Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		5823		pF	VGS =0 V, VDS =50 V, ƒ=100 kHz
Output capacitance	Coss		779		pF
Reverse transfer capacitance	Crss		17.5		pF
Turn-on delay time	td(on)		30.3		ns	VGS =10 V, VDS =50 V, RG=2 Ω, ID=25 A
Rise time	tr		33		ns
Turn-off delay time	td(off)		59.5		ns
Fall time	tf		11.7		ns

Gate Charge Characteristics
 

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		68.9		nC	VGS =10 V, VDS =50 V, ID=25 A
Gate-source charge	Qgs		18.1		nC
Gate-drain charge	Qgd		15.9		nC
Gate plateau voltage	Vplateau		4.8		V

 

Note
1)    Calculated continuous current based on maximum allowable junction temperature.
2)    Repetitive rating; pulse width limited by max. junction temperature.
3)    Pd is based on max. junction temperature, using junction-case thermal resistance.
4)    The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5)    VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj =25 °C.

Ordering Information

Package Type	Units/ Tube	Tubes /  Inner Box	Units/   Inner Box	Inner Boxes/ Carton Box	Units/     Carton Box
TO220-C	50	20	1000	6	6000
TO220-J	50	20	1000	5	5000

Product Information
 

Product	Package	Pb Free	RoHS	Halogen Free
SFG110N12PF	TO220	yes	yes	yes

Supply Chain

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