Low RDS (on) & Fom PC Power Semiconductor Mosfet

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Certification: RoHS, ISO
Encapsulation Structure: Plastic Sealed Transistor
Installation: Plug-in Triode
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Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
Low RDS (on) & Fom PC Power Semiconductor Mosfet pictures & photos
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
  • Low RDS (on) & Fom PC Power Semiconductor Mosfet
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Product Description

Company Info.
Overview

Basic Info.

Model NO.
OSG65R038HZAF -3
Working Frequency
High Frequency
Power Level
Medium Power
Function
Power Triode, Switching Triode
Structure
NPN
Material
Silicon
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Type
Fast EV Charging Station
Warranty
24 Months
Transport Package
Carton
Specification
TO247
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20K/Monthly

Packaging & Delivery

Package Size
59.00cm * 34.00cm * 15.00cm
Package Gross Weight
18.000kg

Product Description

Product Description

General Description

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.

Features                                                                                                   
  • Low RDS(on) & FOM
  • Extremely low switching loss
  • Excellent stability and uniformity
  • Ultra-fast and robust body diode
  • AEC-Q101 Qualified for Automotive Application

Applications
  • PC power
  • Telecom power
  • Server power
  • EV Charger
  • Motor driver


Key Performance Parameters

 
Parameter Value Unit
VDS 650 V
ID, pulse 240 A
RDS(ON), max @ VGS=10V 38 mΩ
Qg 175 nC

Marking Information

 
Product Name Package Marking
OSG65R038HZAF TO247 OSG65R038HZA

Package & Pin Information
 
       
       
 



 The HTRB test was performed at 600V more strictly than the AEC-Q101 rev.C (80% V(BR)DSS). All the other tests were performed according to AEC Q101 rev. E.
 
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage VDS 650 V
Gate-source voltage VGS ±30 V
Continuous drain current1), TC=25 °C
ID		 80
A
Continuous drain current1), TC=100 °C 50
Pulsed drain current2), TC=25 °C ID, pulse 240 A
Continuous diode forward current1), TC=25 °C IS 80 A
Diode pulsed current2), TC=25 °C IS, pulse 240 A
Power dissipation3) ,TC=25 °C PD 500 W
Single pulsed avalanche energy5) EAS 2048 mJ
MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 100 V/ns
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 50 V/ns
Operation and storage temperature Tstg, Tj -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction-case RθJC 0.25 °C/W
Thermal resistance, junction-ambient4) RθJA 62 °C/W

Electrical Characteristics at Tj=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition
Drain-source breakdown voltage BVDSS 650     V VGS=0 V, ID=2 mA
Gate threshold voltage VGS(th) 3.0   4.5 V VDS=VGS, ID=2 mA

Drain-source
on-state resistance
RDS(ON)		   0.032 0.038
Ω		 VGS=10 V, ID=40 A
  0.083   VGS=10 V, ID=40 A, Tj=150 °C
Gate-source leakage current
IGSS		     100
nA		 VGS=30 V
    -100 VGS=-30 V
Drain-source leakage current IDSS     10 μA VDS=650 V, VGS=0 V
Gate resistance RG   2.1   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance Ciss   9276   pF
VGS=0 V, VDS=50 V,
ƒ=100 kHz
Output capacitance Coss   486   pF
Reverse transfer capacitance Crss   12.8   pF
Effective output capacitance, energy related Co(er)   278   pF
VGS=0 V, VDS=0 V-400 V
Effective output capacitance, time related Co(tr)   1477   pF
Turn-on delay time td(on)   55.9   ns
VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A
Rise time tr   121.2   ns
Turn-off delay time td(off)   114.2   ns
Fall time tf   8.75   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Qg   175.0   nC

VGS=10 V, VDS=400 V, ID=40 A
Gate-source charge Qgs   40.1   nC
Gate-drain charge Qgd   76.1   nC
Gate plateau voltage Vplateau   6.4   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage VSD     1.3 V IS=80 A, VGS=0 V
Reverse recovery time trr   180   ns
IS=30 A,
di/dt=100 A/μs
Reverse recovery charge Qrr   1.5   uC
Peak reverse recovery current Irrm   15.2   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
 
Low RDS (on) & Fom PC Power Semiconductor Mosfet
 

Low RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor MosfetLow RDS (on) & Fom PC Power Semiconductor Mosfet
 
 





 

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