Certification: | RoHS, ISO |
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Shape: | ST |
Shielding Type: | Sharp Cutoff Shielding Tube |
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Parameter | Value | Unit |
VDS, min @ Tj(max) | 100 | V |
ID, pulse | 90 | A |
RDS(ON) , max @ VGS=10V | 20 | mΩ |
Qg | 16.2 | nC |
Parameter | Symbol | Value | Unit |
Drain source voltage | VDS | 100 | V |
Gate source voltage | VGS | ±20 | V |
Continuous drain current1) , TC=25 °C | ID | 30 | A |
Pulsed drain current2) , TC=25 °C | ID, pulse | 90 | A |
Continuous diode forward current1) , TC=25 °C | IS | 30 | A |
Diode pulsed current2) , TC=25 °C | IS, pulse | 90 | A |
Power dissipation3) , TC=25 °C | PD | 71 | W |
Single pulsed avalanche energy5) | EAS | 57 | mJ |
Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
Gate threshold voltage |
VGS(th) | 1.4 | 2.5 | V | VDS=VGS, ID=250 μA | |
Drain-source on-state resistance |
RDS(ON) | 13.8 | 20.0 | mΩ | VGS=10 V, ID=10 A | |
Drain-source on-state resistance |
RDS(ON) | 17.4 | 26.0 | mΩ | VGS=4.5 V, ID=7 A | |
Gate-source leakage current |
IGSS |
100 | nA |
VGS=20 V | ||
-100 | VGS=-20 V | |||||
Drain-source leakage current |
IDSS | 1 | μA | VDS=100 V, VGS=0 V |
Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
Total gate charge | Qg | 16.2 | nC | VGS=10 V, VDS=50 V, ID=5 A |
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Gate-source charge | Qgs | 2.8 | nC | |||
Gate-drain charge | Qgd | 4.1 | nC | |||
Gate plateau voltage | Vplateau | 3 | V |
Package Type |
Units/ Reel |
Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
TO252-P | 2500 | 2 | 5000 | 5 | 25000 |
Product | Package | Pb Free | RoHS | Halogen Free |
SFG10S20DF | TO252 | yes | yes | yes |