To252 Sfs06r06df Vds-60V ID-210A RDS (ON) -6milliohm Qg-30nc N-Channel Power Mosfet

• Certification: RoHS, ISO
• Shape: Metal Porcelain Tube
• Shielding Type: Sharp Cutoff Shielding Tube
• Cooling Method: Air Cooled Tube
• Function: Switch Transistor
• Working Frequency: High Frequency
• Model NO.: TO252 SFS06R06DF
• Structure: Planar
• Encapsulation Structure: Chip Transistor
• Power Level: High Power
• Material: Silicon
• Transport Package: Carton
• Specification: 35x37x30cm
• Trademark: Orientalsemi
• Origin: China
• HS Code: 8541290000
• Production Capacity: Over 1kk/Month

Product Description

General Description

FSMOS^® MOSFET is based on Oriental Semiconductor's unique device design to achieve low R_DS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low V_th series is specially designed to use in synchronous rectification power systems with low driving voltage.
 

Features

• Low R_DS(ON) & FOM
• Extremely low switching loss
• Excellent reliability and uniformity
• Fast switching and soft recovery

 

Applications

• PD charger
• Motor driver
• Switching voltage regulator
• DC-DC convertor
• Switched mode power supply

 

Key Performance Parameters

 

Parameter	Value	Unit
VDS, min @ Tj(max)	60	V
ID, pulse	210	A
RDS(ON) max @ VGS=10V	6	mΩ
Qg	30	nC

Marking Information

 

Product Name	Package	Marking
SFS06R06DF	TO252	SFS06R06D

 

 

Absolute Maximum Ratings at T_j=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	60	V
Gate source voltage	VGS	±20	V
Continuous drain current^1), TC=25 °C	ID	70	A
Pulsed drain current^2), TC=25 °C	ID, pulse	210	A
Continuous diode forward current^1), TC=25 °C	IS	70	A
Diode pulsed current^2), TC=25 °C	IS, Pulse	210	A
Power dissipation^3), TC=25 °C	PD	87	W
Single pulsed avalanche energy^5)	EAS	66	mJ
Operation and storage temperature	Tstg,Tj	-55 to 150	°C

 

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal resistance, junction-case	RθJC	1.44	°C/W
Thermal resistance, junction-ambient^4)	RθJA	62	°C/W

Electrical Characteristics at T_j=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Drain-source breakdown voltage	BVDSS	60			V	VGS=0 V, ID=250 μA
Gate threshold voltage	VGS(th)	1.0		2.5	V	VDS=VGS, ID=250 μA
Drain-source on-state resistance	RDS(ON)		4.7	6	mΩ	VGS=10 V, ID=20 A
Drain-source on-state resistance	RDS(ON)		6.4	10	mΩ	VGS=4.5 V, ID=10 A
Gate-source leakage current	IGSS			100	nA	VGS=20 V
				-100		VGS=-20 V
Drain-source leakage current	IDSS			1	μA	VDS=60 V, VGS=0 V
Gate resistance	RG		2.8		Ω	ƒ=1 MHz, Open drain

 

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Ciss		2136		pF	VGS=0 V, VDS=50 V, ƒ=100 kHz
Output capacitance	Coss		332		pF
Reverse transfer capacitance	Crss		10.6		pF
Turn-on delay time	td(on)		22.9		ns	VGS=10 V, VDS=50 V, RG=2 Ω, ID=25 A
Rise time	tr		6.5		ns
Turn-off delay time	td(off)		45.7		ns
Fall time	tf		20.4		ns

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		30		nC	VGS=10 V, VDS=50 V, ID=25 A
Gate-source charge	Qgs		5.8		nC
Gate-drain charge	Qgd		6.1		nC
Gate plateau voltage	Vplateau		3.6		V

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode forward voltage	VSD			1.3	V	IS=20 A, VGS=0 V
Reverse recovery time	trr		50.3		ns	VR=50 V, IS=25 A, di/dt=100 A/μs
Reverse recovery charge	Qrr		45.1		nC
Peak reverse recovery current	Irrm		1.5		A

Note

1. Calculated continuous current based on maximum allowable junction temperature.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. Pd is based on max. junction temperature, using junction-case thermal resistance.
4. The value of R_θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T_a=25 °C.

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
SFS06R06DF	TO252	yes	yes	yes

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